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This study presents an investigation of the morphology and electrical properties of ZnO as well as Ti-doped ZnO thin films, utilizing a fabricated digital spray pyrolysis device at 350 oC. Thin films of both ZnO and Ti-ZnO were prepared from extremely pure zinc acetate (Zn (CH3COO)2.2H2O) as well as titanium dioxide (TiO2) precursors. To change the concentration of the metallic components in the films, the precursors were prepared at 0.2 M using distilled water but was dissolved with the aid of hydrogen peroxide. ZnO with doped Ti films were prepared by combining the precursors in a mixture of Titanium Dioxide 0 to 10% of Zinc acetate. According to scanning electron microscope micrographs, the findings of both the undoped and doped films were seen to be evenly distributed across the substrates. The energy dispersive X-ray results indicated that Zn, O, and Ti were present in the films' elemental composition. The films I-V characteristics demonstrated an improvement of current as the doping increases. Thin films of ZnO doped with Ti produced in this investigation have morphological and I-V properties that make them suitable for use in photovoltaic solar panels.